World-Class Resources > CNSE Wafer Processing Research & Development > Film Deposition > FEOL Films

Thermal / Diffusion (Furnace)

Oxides

• Grown SiO2 using wet, dry, dry/wet/dry, DCE processes to achieve thicknesses from 30 - 5500A at temperature ranges of 700C - 1100C

Anneals

• Gasses available - N2, O2, Forming Gas (N2:H2 up to 10%), H2
• Temperature range - 100 - 1100C 
• Time Range - 10 min - 4 hours

Rapid Thermal Processing

Oxides

• Grown SiO2 using dry processing to achieve SiO2 thicknesses of 10 - 150A

Nitrides

• Grown SiN to a self limiting thickness of 25A
• CVD SiN Thickness - 100 - 1000A

Anneals

• Gases available - O2, N2, NH3, NO, N2O
• Temperature range - 500 - 1100C 
• Time range - Spike to 120 seconds

Hi-K Deposition

• ALD HfO2 in a thickness range of 10 - 30A

Silicon Deposition / Growth

Poly & Amorphous Si Deposition

• Poly - Single wafer, Temperature - 720C, Thicknesses 300 - 1500A
• a-Si - Single wafer, Temperature - 550C, Thicknesses 200 - 1000A

Epitaxial Si Growth

• Si - Thicknesses 10 - 500A
• SiGe - 25% Ge - Thicknesses 20 - 500A