About Us > Faculty & Staff > Operational Staff > Steven Novak

Assistant Vice President, Metrology

Education:

• Ph.D. (Geoscience), Stanford University, 1985
• M.S. (Geoscience), Virginia Tech, 1978

Professional Background:

• Evans Analytical Group, Senior Specialist 2005-2009
• Evans East, Manager, Dynamic SIMS group 1998-2005
• Evans East, Senior SIMS Analyst 1990-1998
• Charles Evans & Associates, SIMS analyst 1985-1990

Research Areas:

• Fundamentals of Dynamic SIMS
• Trace element analysis of semiconductors, glasses, gemstones
• Ion imaging

Selected publications:

Novak, S. W. and Stevenson, C. M., Aspects of SIMS depth profiling for obsidian hydration dating, in review.

Ambrose, W and Novak, S. W., Obsidian hydration chronometrics using SIMS and optical methods from 26 year temperature controlled exposures, in review.

J.-S. Park, Curtin, M., Hydrick, J. M., Carroll, M., Fiorenza, J. G., Lochtefeld, A., Novak, S. W., Comparison of selective Ge growth in SiO2 trenches on Si(001) and on blanket Si(001) substrates: surface roughness and doping, J. Vac. Sci. Tech. B 26(5) Sep/Oct 2008, 1740-1744.

Andy H. Shen, Wuyi Wang, Matthew S. Hall, Steven Novak, Shane F. McClure, James E. Shigley, Thomas M. Moses, Serenity coated colored diamonds: detection and durability, Gems and Gemmology, 2007, V. 43, p. 16-33.

Novak, SW, Magee, CW, Buyuklimanli, T, Using accelerator techniques to verify details in SIMS profiles, Nuc. Inst. Meth. B, DEC 2005, V 241, 321-325.

Wang, YF, Lew, KK, Ho, TT, Pan, L, Novak, SW, Dickey, EC, Redwing, JM, Mayer, TS, Use of phosphine as an n-type dopant source for vapor-liquid-solid growth of silicon nanowires, Nano Letters, NOV 2005, V 5, 2139-2143.

Sahiner, MA, Downey, DF, Novak, SW, Woicik, JC, Arena, DA, The local structural characterization of the inactive clusters in B, BF2 and BF3 implanted Si wafers using X-ray techniques, Microelectronics Jour., MAR-JUN 2005, V 36, 522-526.

Lew, KK, Pan, L, Bogart, TE, Dilts, SM, Dickey, EC, Redwing, JM, Wang, YF, Cabassi, M, Mayer, TS, Novak, SW, Structural and electrical properties of trimethylboron-doped silicon nanowires, Appl. Phys. Lett. OCT 11, 2004, V 85, 3101-3103.

Stevenson, CM, Abdelrehim, IM, Novak, SW, Infra-red photoacoustic and secondary ion mass spectrometry measurements of obsidian hydration rims, J. Archeological Sci., JAN 2001, V 28, 109-115.

Cole, DA, Shallenberger, JR, Novak, SW, Moore, RL, Edgell, MJ, Smith, SP, Hitzman, CJ, Kirchhoff, JF, Principe, E, Nieveen, W, Huang, FK, Biswas, S, Bleiler, RJ, Jones, K, SiO2 thickness determination by x-ray photoelectron spectroscopy, Auger electron spectroscopy, secondary ion mass spectrometry, Rutherford backscattering, transmission electron microscopy, and ellipsometry, J. Vac. Sci. Tech. B, JAN-FEB 2000, V 18, 440-444.

Pinto, J.R., Novak, S.W., Nicholas, M., Aqueous dye diffusion in thin films of water-soluble poly(vinyl pyrrolidone) copolymers: a dynamic secondary ion mass spectrometry study, J. Phys. Chem. B, 1999, 103, p. 8026.